Silicon carbide growth: C/Si ratio evaluation and modeling

Michel Pons, Shin Ichi Nishizawa, Peter Wellmann, E. Blanquet, D. Chaussende, J. M. Dedulle, R. Madar

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2007
編集者Takashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
出版社Trans Tech Publications Ltd
ページ83-88
ページ数6
ISBN(印刷版)9780878493579
出版ステータス出版済み - 1 1 2009
外部発表はい
イベント12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, 日本
継続期間: 10 14 200710 19 2007

出版物シリーズ

名前Materials Science Forum
600-603
ISSN(印刷版)0255-5476

その他

その他12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country日本
CityOtsu
Period10/14/0710/19/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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