Silicon carbide growth: C/Si ratio evaluation and modeling

Michel Pons, Shin Ichi Nishizawa, Peter Wellmann, Elisabeth Blanquet, Didier Chaussende, Jean Marc Dedulle

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD) and hybrid techniques, are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions. Preliminary results show that fine tuning of H2 or precursor additions allow a better control of concentrations of residual and intentional doping.

本文言語英語
ホスト出版物のタイトルSilicon Carbide 2006 - Materials, Processing and Devices
出版社Materials Research Society
ページ67-78
ページ数12
ISBN(印刷版)1558998721, 9781558998728
DOI
出版ステータス出版済み - 2006
外部発表はい
イベント2006 MRS Spring Meeting - San Francisco, CA, 米国
継続期間: 4 18 20064 20 2006

出版物シリーズ

名前Materials Research Society Symposium Proceedings
911
ISSN(印刷版)0272-9172

その他

その他2006 MRS Spring Meeting
Country米国
CitySan Francisco, CA
Period4/18/064/20/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「Silicon carbide growth: C/Si ratio evaluation and modeling」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル