TY - GEN
T1 - Silicon fine structure formation on sapphire with Focused Ion Beam
AU - Bai, D. J.
AU - Zhang, Y. Q.
AU - Matsushita, A.
AU - Baba, A.
AU - Kenjo, A.
AU - Sadoh, T.
AU - Nakashima, H.
AU - Mori, H.
AU - Tsurushima, T.
PY - 1999
Y1 - 1999
N2 - A Tetra-Methyl-Ammonium-Hydroxide (TMAH) aqueous solution etches crystalline silicon without removing the damaged silicon and sapphire. Crystalline silicon films with 600 nm thickness on sapphire were irradiated with Si2+ Focused-Ion-Beams (FIB), and amorphous fine patterns were formed on the surfaces of the silicon films. Crystalline silicon regions were selectively etched off with the TMAH solution without removing the amorphous patterns acting as the etching mask, and silicon fine structures with the maximum feature size of 800 nm were formed. The feature size depends on the film thickness and can be optimized by the FIB irradiation and etching conditions. The technique is expected to be utilized in the nano-electronic device processing.
AB - A Tetra-Methyl-Ammonium-Hydroxide (TMAH) aqueous solution etches crystalline silicon without removing the damaged silicon and sapphire. Crystalline silicon films with 600 nm thickness on sapphire were irradiated with Si2+ Focused-Ion-Beams (FIB), and amorphous fine patterns were formed on the surfaces of the silicon films. Crystalline silicon regions were selectively etched off with the TMAH solution without removing the amorphous patterns acting as the etching mask, and silicon fine structures with the maximum feature size of 800 nm were formed. The feature size depends on the film thickness and can be optimized by the FIB irradiation and etching conditions. The technique is expected to be utilized in the nano-electronic device processing.
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M3 - Conference contribution
AN - SCOPUS:0033355886
SN - 078034538X
T3 - Proceedings of the International Conference on Ion Implantation Technology
SP - 1101
EP - 1104
BT - Proceedings of the International Conference on Ion Implantation Technology
PB - IEEE
T2 - Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
Y2 - 22 June 1998 through 26 June 1998
ER -