Silicon fine structure formation on sapphire with Focused Ion Beam

D. J. Bai, Y. Q. Zhang, A. Matsushita, A. Baba, A. Kenjo, T. Sadoh, H. Nakashima, H. Mori, T. Tsurushima

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

3 被引用数 (Scopus)

抄録

A Tetra-Methyl-Ammonium-Hydroxide (TMAH) aqueous solution etches crystalline silicon without removing the damaged silicon and sapphire. Crystalline silicon films with 600 nm thickness on sapphire were irradiated with Si2+ Focused-Ion-Beams (FIB), and amorphous fine patterns were formed on the surfaces of the silicon films. Crystalline silicon regions were selectively etched off with the TMAH solution without removing the amorphous patterns acting as the etching mask, and silicon fine structures with the maximum feature size of 800 nm were formed. The feature size depends on the film thickness and can be optimized by the FIB irradiation and etching conditions. The technique is expected to be utilized in the nano-electronic device processing.

本文言語英語
ホスト出版物のタイトルProceedings of the International Conference on Ion Implantation Technology
出版社IEEE
ページ1101-1104
ページ数4
ISBN(印刷版)078034538X
出版ステータス出版済み - 1999
イベントProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
継続期間: 6月 22 19986月 26 1998

出版物シリーズ

名前Proceedings of the International Conference on Ion Implantation Technology
2

その他

その他Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
CityKyoto, Jpn
Period6/22/986/26/98

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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