Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding

Linghan Li, Akio Higo, Ryo Takigawa, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

A silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode was developed and realized by silicon MEMS process and plasma assisted direct bonding. The InGaAsP Multiple Quantum Well (MQW) was integrated onto a SOI platform with highly doped micro rib by O2/Ar plasma assisted bonding which greatly improves the electrical property between the heterointerface. The photon-electron conversion of the photodiode was successfully demonstrated. The waveguide photodiode shows around 50% quantum efficiency at 1550nm and TE polarization.

本文言語英語
ホスト出版物のタイトル2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
ページ2502-2505
ページ数4
DOI
出版ステータス出版済み - 9 1 2011
外部発表はい
イベント2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, 中国
継続期間: 6 5 20116 9 2011

出版物シリーズ

名前2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

その他

その他2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
国/地域中国
CityBeijing
Period6/5/116/9/11

All Science Journal Classification (ASJC) codes

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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