Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si

Hiroshi Ishiwara, Tanemasa Asano

研究成果: ジャーナルへの寄稿学術誌査読

132 被引用数 (Scopus)

抄録

Epitaxial growth of CaF2 films onto Si(100) and (111) substrates and the growth of Si films onto the CaF2/Si structure have been investigated. It has been found from ion channeling and backscattering measurements that the optimum growth temperatures at which the crystalline quality of the CaF2 films is excellent range from 600 to 800°C for Si(111) substrates and from 500 to 600°C for Si (100). It has also been found that a heteroepitaxial Si/CaF2/Si(111) structure is formed by vacuum deposition of Si onto the heated CaF2/Si(111) structure.

本文言語英語
ページ(範囲)66-68
ページ数3
ジャーナルApplied Physics Letters
40
1
DOI
出版ステータス出版済み - 1982
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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