In order to study the particle growth processes in GeH4 RF discharges, the spatial distribution of the absolute GeH2 density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm2. The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH2 density. Furthermore, GeH2 density is about 1010 cm-3, being close to SiH2 density in SiH4 discharges for the similar conditions of RF power and pressure. These results indicate that GeH2 is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||出版済み - 1998|
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