Simulation analysis of point defects in a silicon ingot during a unidirectional solidification process for solar cells

X. J. Chen, S. Nakano, L. J. Liu, K. Kakimoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

A transient global model was used to obtain the solution of a thermal field within the entire furnace of a unidirectional solidification process. The melt-solid interface shape was obtained by a dynamic interface tracking method. Then, based on the global solution of heat transfer, the effects of growth rate Vg, temperature gradient G and ratio Vg/G on point defects were analyzed. Finally, several different melt-solid interface shapes were obtained by using different solidification times. Then the effects of solidification time on ratio Vg/G and point defects were also studied.

本文言語英語
ホスト出版物のタイトルECS Transactions - ISTC/CSTIC 2009 (CISTC)
ページ1031-1035
ページ数5
1 PART 2
DOI
出版ステータス出版済み - 12 1 2009
外部発表はい
イベントISTC/CSTIC 2009 (CISTC) - Shanghai, 中国
継続期間: 3 19 20093 20 2009

出版物シリーズ

名前ECS Transactions
番号1 PART 2
18
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他ISTC/CSTIC 2009 (CISTC)
Country中国
CityShanghai
Period3/19/093/20/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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