Simulation, fabrication and characterization of 4h-SiC floating junction schottky barrier diodes (Super-SBDs)

C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, S. Nishizawa, H. Ohashi

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

9 被引用数 (Scopus)

抄録

The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd2/Ron was improved to 11,354MW/cm2.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
編集者N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall
出版社Trans Tech Publications Ltd
ページ881-884
ページ数4
ISBN(印刷版)0878494421, 9780878494422, 9780878494422
DOI
出版ステータス出版済み - 2007
外部発表はい
イベント6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006 - Newcastle upon Tyne, 英国
継続期間: 9 3 20069 7 2006

出版物シリーズ

名前Materials Science Forum
556-557
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

会議

会議6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006
Country英国
CityNewcastle upon Tyne
Period9/3/069/7/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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