Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs)

C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, Shinichi Nishizawa, H. Ohashi

研究成果: ジャーナルへの寄稿Conference article

8 引用 (Scopus)

抄録

The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57mΩcm 2. The world record of Bariga's Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd2/Ron was improved to 11,354MW/cm2.

元の言語英語
ページ(範囲)881-884
ページ数4
ジャーナルMaterials Science Forum
556-557
出版物ステータス出版済み - 12 1 2007
イベント6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 - Newcastle upon Tyne, 英国
継続期間: 9 3 20069 7 2007

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Schottky barrier diodes
Schottky diodes
Electric breakdown
floating
Fabrication
fabrication
electrical faults
figure of merit
simulation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Ota, C., Nishio, J., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S., & Ohashi, H. (2007). Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs). Materials Science Forum, 556-557, 881-884.

Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs). / Ota, C.; Nishio, J.; Hatakeyama, T.; Shinohe, T.; Kojima, K.; Nishizawa, Shinichi; Ohashi, H.

:: Materials Science Forum, 巻 556-557, 01.12.2007, p. 881-884.

研究成果: ジャーナルへの寄稿Conference article

Ota, C, Nishio, J, Hatakeyama, T, Shinohe, T, Kojima, K, Nishizawa, S & Ohashi, H 2007, 'Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs)', Materials Science Forum, 巻. 556-557, pp. 881-884.
Ota, C. ; Nishio, J. ; Hatakeyama, T. ; Shinohe, T. ; Kojima, K. ; Nishizawa, Shinichi ; Ohashi, H. / Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs). :: Materials Science Forum. 2007 ; 巻 556-557. pp. 881-884.
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AU - Nishio, J.

AU - Hatakeyama, T.

AU - Shinohe, T.

AU - Kojima, K.

AU - Nishizawa, Shinichi

AU - Ohashi, H.

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