Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern

Kaoru Toko, Yasuharu Ohta, Takashi Sakane, Taizoh Sadoh, Ichiro Mizushima, Masanobu Miyao

研究成果: ジャーナルへの寄稿学術誌査読

27 被引用数 (Scopus)

抄録

Single-crystalline-Ge (c-Ge) networks on insulator films formed on Si substrates are essential for integrating high-speed and multifunctional devices onto the Si-platform. Rapid-melting-growth of mesh-patterned amorphous-Ge is examined over large areas (500×250 μ m2). For squared-mesh-pattern, polycrystalline-Ge forms throughout most of the mesh, though c-Ge is obtained near (<100 μm) Si-seed. Based on the consideration of geometric-effects, mesh-patterns are changed to hexagonal. This realizes c-Ge networks over the entire insulator area. These results indicate that Ge growth initiated from Si-seed propagates laterally over the hexagonal-mesh- pattern though bending and branching. These unique c-Ge-networks on insulators facilitate Ge-based advanced-devices on the Si-platform.

本文言語英語
論文番号042101
ジャーナルApplied Physics Letters
98
4
DOI
出版ステータス出版済み - 1月 24 2011

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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