Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth

Masashi Kurosawa, Yuki Tojo, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao

研究成果: ジャーナルへの寄稿記事

33 引用 (Scopus)

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Single-crystalline laterally graded GeSn-on-insulator (GeSnOI) structures are essential to achieve novel device-arrays with various direct-energy-band gaps, which can be merged with high-density Si large-scale-integrated-circuits. We investigate the seeding rapid-melting-growth of narrow stripes with a-Ge/Sn/a-Ge stacked-structures. This achieves laterally graded GeSn crystalline layers on Si substrates covered with SiO 2 films. Stripe-length dependent GeSn lateral-profiles are quantitatively explained by Scheil equation, which enables precise designing of GeSn lateral-profiles. High-crystallinity GeSn stripes without dislocations or stacking faults are also demonstrated.

元の言語英語
記事番号091905
ジャーナルApplied Physics Letters
101
発行部数9
DOI
出版物ステータス出版済み - 8 27 2012

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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