Single-crystalline laterally graded GeSn-on-insulator (GeSnOI) structures are essential to achieve novel device-arrays with various direct-energy-band gaps, which can be merged with high-density Si large-scale-integrated-circuits. We investigate the seeding rapid-melting-growth of narrow stripes with a-Ge/Sn/a-Ge stacked-structures. This achieves laterally graded GeSn crystalline layers on Si substrates covered with SiO 2 films. Stripe-length dependent GeSn lateral-profiles are quantitatively explained by Scheil equation, which enables precise designing of GeSn lateral-profiles. High-crystallinity GeSn stripes without dislocations or stacking faults are also demonstrated.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)