Single-step dry-etched lateral PIN by using trench structure for optical mode switch

Ryan Imansyah, Luke Himbele, Haisong Jiang, Kiichi Hamamoto

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

Trench structure that enables lateral PIN with single-step dry-etching was exploited to optical mode switch for the first time. Successful current-injected (60mA) optical mode switching was confirmed with polarization independent characteristics.

元の言語英語
ホスト出版物のタイトル2015 International Conference on Photonics in Switching, PS 2015
出版者Institute of Electrical and Electronics Engineers Inc.
ページ232-234
ページ数3
ISBN(電子版)9781479988211
DOI
出版物ステータス出版済み - 11 13 2015
イベントInternational Conference on Photonics in Switching, PS 2015 - Florence, イタリア
継続期間: 9 22 20159 25 2015

その他

その他International Conference on Photonics in Switching, PS 2015
イタリア
Florence
期間9/22/159/25/15

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

これを引用

Imansyah, R., Himbele, L., Jiang, H., & Hamamoto, K. (2015). Single-step dry-etched lateral PIN by using trench structure for optical mode switch. : 2015 International Conference on Photonics in Switching, PS 2015 (pp. 232-234). [7329010] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PS.2015.7329010