Single-walled carbon nanotube thin film transistor fabricated using solution prepared with 9,9-dioctyfluorenyl-2,7-diyl-bipyridine copolymer

Xun Yi, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

Performance of thin film transistor (TFT) whose channel is fabricated by using a solution process of single-walled carbon nanotube (SWCNT) has been studied. SWCNT solution is prepared by using 9,9-dioctyfluorenyl-2,7-diyl- bipyridine (PFO-BPy) copolymer as solubilizer. Over 4 decades' on/off ratio is obtained by using drop-coating at room temperature without any further optimization. Other solubilizers are chosen as control groups to measure the on/off ratio of SWCNT TFT to investigate effects of the use of PFO-BPy. Results suggest that thick SWCNT network should be uniformly established at the channel region and the channel is required to be formed with well-separated SWCNTs.

本文言語英語
論文番号070207
ジャーナルJapanese journal of applied physics
50
7 PART 1
DOI
出版ステータス出版済み - 7 2011

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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