The film and interface structures of epitaxial silicon oxynitride (SiON) thin film grown on a SiC(0001) surface were investigated by photoelectron diffraction. Forward focusing peaks (FFPs) corresponding to the directions from the photoelectron emitter atom to the surrounding atoms appeared in the photoelectron intensity angular distribution (PIAD). By comparing N 1s PIAD with those of Si 2p and C 1s, we confirmed that the nitrogen atoms at SiON/SiC interface replace carbon atoms at stacking fault sites. Two kinds of oxygen atom sites exist in the previously proposed model [T. Shirasawa et al.: Phys. Rev. Lett. 98, 136105 (2007)]. FFP corresponding to Si-O-Si perpendicular bonds was observed in the O 1s PIAD, while diffraction rings were observed in the KLL Auger electron intensity angular distribution (AIAD), which were attributed to the diffraction patterns from outermost oxygen sites. Furthermore, O Kedge X-ray absorption spectra combined with AIAD were analyzed. An electronic structure specific to each oxygen atom site was successfully separated.
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