Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

研究成果: Contribution to journalArticle査読

抄録

A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance Ron A reduction and high speed switching due to flat electric field distribution and low gate density by the slit oxide. Therefore, Slit FP power MOSFET achieves better RonA-Ron Qsw and RonA-Ron Qg tradeoff characteristics compared with conventional FP power MOSFET. TCAD simulation result shows 12% of Ron A, 11% of Ron Qsw, and 20% of Ron Qg can be reduced simultaneously by the Slit FP power MOSFET compared with the conventional FP power MOSFET at the lowest Ron A design.

本文言語英語
論文番号9429711
ページ(範囲)552-556
ページ数5
ジャーナルIEEE Journal of the Electron Devices Society
9
DOI
出版ステータス出版済み - 2021

All Science Journal Classification (ASJC) codes

  • バイオテクノロジー
  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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