Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion

I. Tsunoda, K. Nagatomo, A. Kenjo, T. Sadoh, M. Miyao

研究成果: ジャーナルへの寄稿会議記事査読

6 被引用数 (Scopus)

抄録

Effects of local Ge-insertion in a-Si films on solid-phase crystallization (SPC) were investigated. Three types of stacked structures, i.e. (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2 and (c) SiO 2/a-Ge/a-Si/SiO2 were fabricated and annealed at 600 °C. The results for the structure (a) showed that Ge atoms diffused into the Si layers, and no-enhanced SPC was detected. On the other hand, the results for the structures (b) and (c) indicated that Ge atoms were localized in the initial position. In addition, significant enhancement of SPC of a-Si was found. These results indicated that crystal nucleation was initiated at Ge layers directly contacted to SiO2, and then propagated into a-Si layer. Consequently, interface nucleation driven SPC becomes possible by using the structures (b) and (c). This will be a useful tool to achieve growth of Si crystals with a preferential orientation on SiO2.

本文言語英語
ページ(範囲)489-492
ページ数4
ジャーナルThin Solid Films
451-452
DOI
出版ステータス出版済み - 3月 22 2004
イベントProceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, フランス
継続期間: 6月 10 20036月 13 2003

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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