Orientation dependent solid-phase growth of β-FeSi_2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe (thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi_2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi_2 and Si substrates, i.e., the lattice mismatch between β-FeSi_2(100) and Si (100), β-FeSi_2 (110) or (101) and Si (111), and β-FeSi_2(010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.
|ジャーナル||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|出版ステータス||出版済み - 9月 26 2003|