Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

R. S. Kern, S. Tanaka, R. F. Davis

研究成果: Contribution to journalArticle

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抜粋

Solid solutions of aluminum nitride (AIN) and silicon carbide (SiC), the only intermediate phases in their respective binary systems, have been grown at 1050 °C on a(6H)-SiC(0001) substrates cut 3-4° off-axis toward [1120] using plasma-assisted, gas-source molecular beam epitaxy. A film having the approximate composition of (AlN)0.3(SiC)0.7 as determined by Auger spectrometry, was selected for additional study and is the focus of this note. High resolution transmission electron microscopy (HRTEM) revealed that the film was monocrystalline with the wurtzite (2H) crystal structure.

元の言語英語
ページ(範囲)1477-1480
ページ数4
ジャーナルJournal of Materials Research
8
発行部数7
DOI
出版物ステータス出版済み - 7 1993
外部発表Yes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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