Solubility and diffusion coefficient of electrically active titanium in silicon

Shigehiro Kuge, Hiroshi Nakashima

    研究成果: Contribution to journalArticle査読

    17 被引用数 (Scopus)

    抄録

    The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of Ec — 0.09 V, a donor level of Ec — 0.21 eV and a double-donor level of EV + 0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150°C and in the lower range 600-800°C. The diffusion coefficient is represented by DTi= 1.2 x 10-1exp (-2.05/kT) cm2 s-1.

    本文言語英語
    ページ(範囲)2659-2663
    ページ数5
    ジャーナルJapanese Journal of Applied Physics
    30
    11R
    DOI
    出版ステータス出版済み - 11 1991

    All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

    フィンガープリント

    「Solubility and diffusion coefficient of electrically active titanium in silicon」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル