TY - JOUR
T1 - Solubility and diffusion coefficient of electrically active titanium in silicon
AU - Kuge, Shigehiro
AU - Nakashima, Hiroshi
PY - 1991/11
Y1 - 1991/11
N2 - The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of Ec — 0.09 V, a donor level of Ec — 0.21 eV and a double-donor level of EV + 0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150°C and in the lower range 600-800°C. The diffusion coefficient is represented by DTi= 1.2 x 10-1exp (-2.05/kT) cm2 s-1.
AB - The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of Ec — 0.09 V, a donor level of Ec — 0.21 eV and a double-donor level of EV + 0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150°C and in the lower range 600-800°C. The diffusion coefficient is represented by DTi= 1.2 x 10-1exp (-2.05/kT) cm2 s-1.
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U2 - 10.1143/JJAP.30.2659
DO - 10.1143/JJAP.30.2659
M3 - Article
AN - SCOPUS:0026256316
VL - 30
SP - 2659
EP - 2663
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11R
ER -