Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors
Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka
研究成果: ジャーナルへの寄稿 › 学術誌 › 査読
3
被引用数
(Scopus)