Solution growth of self-standing 6H-SiC single crystal using metal solvent

K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara, K. Nakajima

研究成果: ジャーナルへの寄稿会議記事査読

40 被引用数 (Scopus)

抄録

Silicon carbide (SiC) crystal growth from ternary solutions Si-C-X where X is a transition metal was studied. In order to select the desirable transition element and to determine the solution composition, we have conducted the calculations of ternary phase diagrams by means of CALPHAD (CALculation of PHase Diagrams) method. Preliminary growth experiments without a seed crystal were also performed. Among various Si-based solutions, Si-C-Ti was one of the most effective solutions to increase crystal growth rate compared with Si-C. Optical microscopic observation of the obtained SiC etched by molten KOH showed no micropipe defects in the crystals. We have also performed the growth experiments with 6H-SiC seed crystal under temperature gradient. As a result, we have successfully obtained a 12mm × 12mm self standing SiC crystal.

本文言語英語
ページ(範囲)123-126
ページ数4
ジャーナルMaterials Science Forum
457-460
I
DOI
出版ステータス出版済み - 1月 1 2004
外部発表はい
イベントProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, フランス
継続期間: 10月 5 200310月 10 2003

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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