Solution growth of self-standing 6H-SiC single crystal using metal solvent

K. Kusunoki, Shinji Munetoh, K. Kamei, M. Hasebe, T. Ujihara, K. Nakajima

研究成果: ジャーナルへの寄稿記事

37 引用 (Scopus)

抄録

Silicon carbide (SiC) crystal growth from ternary solutions Si-C-X where X is a transition metal was studied. In order to select the desirable transition element and to determine the solution composition, we have conducted the calculations of ternary phase diagrams by means of CALPHAD (CALculation of PHase Diagrams) method. Preliminary growth experiments without a seed crystal were also performed. Among various Si-based solutions, Si-C-Ti was one of the most effective solutions to increase crystal growth rate compared with Si-C. Optical microscopic observation of the obtained SiC etched by molten KOH showed no micropipe defects in the crystals. We have also performed the growth experiments with 6H-SiC seed crystal under temperature gradient. As a result, we have successfully obtained a 12mm × 12mm self standing SiC crystal.

元の言語英語
ページ(範囲)123-126
ページ数4
ジャーナルMaterials Science Forum
457-460
発行部数I
出版物ステータス出版済み - 2004
外部発表Yes

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Silicon carbide
silicon carbides
Metals
Single crystals
Crystals
single crystals
Crystallization
Crystal growth
metals
Phase diagrams
crystals
crystal growth
seeds
Transition Elements
transition metals
phase diagrams
Thermal gradients
Transition metals
Molten materials
temperature gradients

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kusunoki, K., Munetoh, S., Kamei, K., Hasebe, M., Ujihara, T., & Nakajima, K. (2004). Solution growth of self-standing 6H-SiC single crystal using metal solvent. Materials Science Forum, 457-460(I), 123-126.

Solution growth of self-standing 6H-SiC single crystal using metal solvent. / Kusunoki, K.; Munetoh, Shinji; Kamei, K.; Hasebe, M.; Ujihara, T.; Nakajima, K.

:: Materials Science Forum, 巻 457-460, 番号 I, 2004, p. 123-126.

研究成果: ジャーナルへの寄稿記事

Kusunoki, K, Munetoh, S, Kamei, K, Hasebe, M, Ujihara, T & Nakajima, K 2004, 'Solution growth of self-standing 6H-SiC single crystal using metal solvent', Materials Science Forum, 巻. 457-460, 番号 I, pp. 123-126.
Kusunoki K, Munetoh S, Kamei K, Hasebe M, Ujihara T, Nakajima K. Solution growth of self-standing 6H-SiC single crystal using metal solvent. Materials Science Forum. 2004;457-460(I):123-126.
Kusunoki, K. ; Munetoh, Shinji ; Kamei, K. ; Hasebe, M. ; Ujihara, T. ; Nakajima, K. / Solution growth of self-standing 6H-SiC single crystal using metal solvent. :: Materials Science Forum. 2004 ; 巻 457-460, 番号 I. pp. 123-126.
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