TY - JOUR
T1 - Solvation effects on collisional processes of size-selected I-2(CO2)n cluster ions with silicon surface
AU - Yasumatsu, Hisato
AU - Tsukuda, Tatsuya
AU - Sugai, Toshiki
AU - Terasaki, Akira
AU - Nagata, Takashi
AU - Kondow, Tamotsu
PY - 1996/2
Y1 - 1996/2
N2 - Collisional processes of I-2 (CO2)n with a silicon surface were investigated. Size-selected I-2 (CO2)n (n = 0-30) were allowed to collide with a silicon surface at collision energies per I-2 of 1-150 eV at almost normal incidence angles. All the anions scattered from the surface were I-, I-(CO2), I-(CO2)2, I-2, I-2(CO2), and I-0(CO2)2. The molecular dynamics simulation revealed that the dissociation of I-2 occurs through vibrational and rotational excitation. The I-2 dissociation was found to be either retarded or accelerated by the presence of the solvent CO2 molecules. The solvation effects on the dissociation of I-2 were explained in terms of energy transfer between I-2 and CO2 solvent molecules and a complex formed on the surface at the moment of the collision.
AB - Collisional processes of I-2 (CO2)n with a silicon surface were investigated. Size-selected I-2 (CO2)n (n = 0-30) were allowed to collide with a silicon surface at collision energies per I-2 of 1-150 eV at almost normal incidence angles. All the anions scattered from the surface were I-, I-(CO2), I-(CO2)2, I-2, I-2(CO2), and I-0(CO2)2. The molecular dynamics simulation revealed that the dissociation of I-2 occurs through vibrational and rotational excitation. The I-2 dissociation was found to be either retarded or accelerated by the presence of the solvent CO2 molecules. The solvation effects on the dissociation of I-2 were explained in terms of energy transfer between I-2 and CO2 solvent molecules and a complex formed on the surface at the moment of the collision.
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U2 - 10.1142/s0218625x96001625
DO - 10.1142/s0218625x96001625
M3 - Article
AN - SCOPUS:0000426117
VL - 3
SP - 901
EP - 904
JO - Surface Review and Letters
JF - Surface Review and Letters
SN - 0218-625X
IS - 1
ER -