Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

Akio Kaneta, Tomoaki Izumi, Koichi Okamoto, Yoichi Kawakami, Shigeo Fujita, Yoshihito Narita, Tsutomu Inoue, Takashi Mukai

研究成果: ジャーナルへの寄稿学術誌査読

26 被引用数 (Scopus)

抄録

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW)-based light-emitting diode structure by near-field optical microscopy under the illumination-collection mode. The obtained PL mapping image revealed a variation in both peak and intensity of PL spectra according to the probing location with a scale less than about 200 nm. The variation in PL intensity is from 0.8 to 1.8 in arbitrary units indicating that the internal quantum efficiency fluctuates from 10% to 50% within the active layer.

本文言語英語
ページ(範囲)110-111
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
1
DOI
出版ステータス出版済み - 1月 2001
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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