Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW)-based light-emitting diode structure by near-field optical microscopy under the illumination-collection mode. The obtained PL mapping image revealed a variation in both peak and intensity of PL spectra according to the probing location with a scale less than about 200 nm. The variation in PL intensity is from 0.8 to 1.8 in arbitrary units indicating that the internal quantum efficiency fluctuates from 10% to 50% within the active layer.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||出版済み - 1月 2001|
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