Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures

A. Kaneta, G. Marutsuki, K. Okamoto, Y. Kawakami, Y. Nakagawa, G. Shinomiya, T. Mukai, Sg Fujita

研究成果: ジャーナルへの寄稿学術誌査読

3 被引用数 (Scopus)

抄録

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images revealed the variation of both peak energy and intensity in PL spectra according to the probing location with the scale less than a few hundreds nm.

本文言語英語
ページ(範囲)153-156
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
228
1
DOI
出版ステータス出版済み - 11月 1 2001

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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