Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, M. Kaneda, T. Tamura, N. Iyomoto, M. Sugizaki, H. Ozawa, A. Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, S. KuboY. Terada, Y. Matsumoto, Y. Uchiyama, D. Yonetoku, I. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

研究成果: Contribution to conferencePaper査読

抄録

The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.

本文言語英語
ページ7/66-7/70
出版ステータス出版済み - 2000
外部発表はい
イベント2000 IEEE Nuclear Science Symposium Conference Record - Lyon, フランス
継続期間: 10 15 200010 20 2000

その他

その他2000 IEEE Nuclear Science Symposium Conference Record
国/地域フランス
CityLyon
Period10/15/0010/20/00

All Science Journal Classification (ASJC) codes

  • 放射線
  • 核物理学および高エネルギー物理学
  • 放射線学、核医学およびイメージング

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