Spectroscopic ellipsometry characterization of the optical properties and thermal stability of Zr O2 films made by ion-beam assisted deposition

C. V. Ramana, S. Utsunomiya, R. C. Ewing, U. Becker, V. V. Atuchin, V. Sh Aliev, V. N. Kruchinin

研究成果: ジャーナルへの寄稿学術誌査読

65 被引用数 (Scopus)

抄録

The optical properties, interface structure, and thermal stability of the Zr O2 films grown on Si(100) were investigated in detail. A 2 nm thick interfacial layer (IL) is formed at the Zr O2 -Si interface for the as-grown Zr O2. The optical constants of Zr O2 films and IL correspond to amorphous- Zr O2 and amorphous- Si O2, respectively. The oxidation and IL growth at 900 °C, as a function of annealing time, exhibit a two-step behavior with a slow and a fast growth-rate zones. The transition from a zone of slow to fast rate is attributed to structurally modified Zr O2 facilitating the faster oxygen transport to the Zr O2 Si interface.

本文言語英語
論文番号011917
ジャーナルApplied Physics Letters
92
1
DOI
出版ステータス出版済み - 2008
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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