Thin films of indium oxide were prepared on alumina and silicon substrates by spin-coating from an aqueous acetic acid solution dissolving In(OH)3 and ammonium carboxymethyl cellulose. The films could cover well the large grains of rough alumina as well as the flat surface of silicon. By changing the number of spin-coating, the film thickness was well controlled between 70 nm and 210 nm on alumina or between 65 nm and 220 nm on silicon, as observed by cross-sectional FE-SEM. Gas sensing properties including sensitivity, selectivity and the rates of response and recovery were strongly dependent on the kind of substrate, film thickness and operating temperature.
|ジャーナル||Sensors and Actuators, B: Chemical|
|出版ステータス||出版済み - 6月 30 2000|
|イベント||IMCS-7: 7th International Meeting on Chemical Sensors - Beijing, China|
継続期間: 7月 27 1998 → 7月 30 1998
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