Split pump region in 1.55 μm InGaAsP/InGaAsP asymmetric active multi-mode interferometer laser diode for improved modulation bandwidth

Mohammad Nasir Uddin, Takaaki Kizu, Yasuhiro Hinokuma, Kazuhiro Tanabe, Akio Tajima, Kazutoshi Kato, Kiichi Hamamoto

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

Laser diode capable of high speed direct modulation is one of the key solution for short distance applications due to their low power consumption, low cost and small size features. Realization of high modulation bandwidth for direct modulated laser maintaining the above mentioned feature is needed to enhance the short distance, low cost data transmission. One promising approach to enhance the modulation speed is to increase the photon density to achieve high modulation bandwidth. So to achieve this target, 1.55 μm InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric active multimode interferometer laser diode (active MMI-LD) has been demonstrated [1]. The split pumping concept has been applied for the active MMI-LD and significant enhancement of electrical to optical 3 dB down frequency bandwidth (f3dB) up to 8 GHz has been successfully confirmed. The reported high bandwidth for split pump active MMI-LD is around 3.5 times higher than the previously reported maximum 3 dB bandwidth (2.3 GHz) of active MMI-LD without split pumping section. That shows, the splitted multimode pumping section behind the electrically isolated modulation section can potentially improve the modulation bandwidth of active MMI-LD. Clear and open eye diagram had also been confirmed for 2.5 Gbps, (27-1) pseudo random bit sequence (PRBS) modulation.

元の言語英語
ページ(範囲)781-786
ページ数6
ジャーナルIEICE Transactions on Electronics
E97-C
発行部数7
DOI
出版物ステータス出版済み - 7 2014

Fingerprint

Interferometers
Semiconductor lasers
Modulation
Pumps
Bandwidth
Data communication systems
Semiconductor quantum wells
Costs
Electric power utilization
Photons
Lasers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Split pump region in 1.55 μm InGaAsP/InGaAsP asymmetric active multi-mode interferometer laser diode for improved modulation bandwidth. / Nasir Uddin, Mohammad; Kizu, Takaaki; Hinokuma, Yasuhiro; Tanabe, Kazuhiro; Tajima, Akio; Kato, Kazutoshi; Hamamoto, Kiichi.

:: IEICE Transactions on Electronics, 巻 E97-C, 番号 7, 07.2014, p. 781-786.

研究成果: ジャーナルへの寄稿記事

Nasir Uddin, Mohammad ; Kizu, Takaaki ; Hinokuma, Yasuhiro ; Tanabe, Kazuhiro ; Tajima, Akio ; Kato, Kazutoshi ; Hamamoto, Kiichi. / Split pump region in 1.55 μm InGaAsP/InGaAsP asymmetric active multi-mode interferometer laser diode for improved modulation bandwidth. :: IEICE Transactions on Electronics. 2014 ; 巻 E97-C, 番号 7. pp. 781-786.
@article{ecce8fd115284eef8f06ca4f6fc2faa8,
title = "Split pump region in 1.55 μm InGaAsP/InGaAsP asymmetric active multi-mode interferometer laser diode for improved modulation bandwidth",
abstract = "Laser diode capable of high speed direct modulation is one of the key solution for short distance applications due to their low power consumption, low cost and small size features. Realization of high modulation bandwidth for direct modulated laser maintaining the above mentioned feature is needed to enhance the short distance, low cost data transmission. One promising approach to enhance the modulation speed is to increase the photon density to achieve high modulation bandwidth. So to achieve this target, 1.55 μm InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric active multimode interferometer laser diode (active MMI-LD) has been demonstrated [1]. The split pumping concept has been applied for the active MMI-LD and significant enhancement of electrical to optical 3 dB down frequency bandwidth (f3dB) up to 8 GHz has been successfully confirmed. The reported high bandwidth for split pump active MMI-LD is around 3.5 times higher than the previously reported maximum 3 dB bandwidth (2.3 GHz) of active MMI-LD without split pumping section. That shows, the splitted multimode pumping section behind the electrically isolated modulation section can potentially improve the modulation bandwidth of active MMI-LD. Clear and open eye diagram had also been confirmed for 2.5 Gbps, (27-1) pseudo random bit sequence (PRBS) modulation.",
author = "{Nasir Uddin}, Mohammad and Takaaki Kizu and Yasuhiro Hinokuma and Kazuhiro Tanabe and Akio Tajima and Kazutoshi Kato and Kiichi Hamamoto",
year = "2014",
month = "7",
doi = "10.1587/transele.E97.C.781",
language = "English",
volume = "E97-C",
pages = "781--786",
journal = "IEICE Transactions on Electronics",
issn = "0916-8524",
publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",
number = "7",

}

TY - JOUR

T1 - Split pump region in 1.55 μm InGaAsP/InGaAsP asymmetric active multi-mode interferometer laser diode for improved modulation bandwidth

AU - Nasir Uddin, Mohammad

AU - Kizu, Takaaki

AU - Hinokuma, Yasuhiro

AU - Tanabe, Kazuhiro

AU - Tajima, Akio

AU - Kato, Kazutoshi

AU - Hamamoto, Kiichi

PY - 2014/7

Y1 - 2014/7

N2 - Laser diode capable of high speed direct modulation is one of the key solution for short distance applications due to their low power consumption, low cost and small size features. Realization of high modulation bandwidth for direct modulated laser maintaining the above mentioned feature is needed to enhance the short distance, low cost data transmission. One promising approach to enhance the modulation speed is to increase the photon density to achieve high modulation bandwidth. So to achieve this target, 1.55 μm InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric active multimode interferometer laser diode (active MMI-LD) has been demonstrated [1]. The split pumping concept has been applied for the active MMI-LD and significant enhancement of electrical to optical 3 dB down frequency bandwidth (f3dB) up to 8 GHz has been successfully confirmed. The reported high bandwidth for split pump active MMI-LD is around 3.5 times higher than the previously reported maximum 3 dB bandwidth (2.3 GHz) of active MMI-LD without split pumping section. That shows, the splitted multimode pumping section behind the electrically isolated modulation section can potentially improve the modulation bandwidth of active MMI-LD. Clear and open eye diagram had also been confirmed for 2.5 Gbps, (27-1) pseudo random bit sequence (PRBS) modulation.

AB - Laser diode capable of high speed direct modulation is one of the key solution for short distance applications due to their low power consumption, low cost and small size features. Realization of high modulation bandwidth for direct modulated laser maintaining the above mentioned feature is needed to enhance the short distance, low cost data transmission. One promising approach to enhance the modulation speed is to increase the photon density to achieve high modulation bandwidth. So to achieve this target, 1.55 μm InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric active multimode interferometer laser diode (active MMI-LD) has been demonstrated [1]. The split pumping concept has been applied for the active MMI-LD and significant enhancement of electrical to optical 3 dB down frequency bandwidth (f3dB) up to 8 GHz has been successfully confirmed. The reported high bandwidth for split pump active MMI-LD is around 3.5 times higher than the previously reported maximum 3 dB bandwidth (2.3 GHz) of active MMI-LD without split pumping section. That shows, the splitted multimode pumping section behind the electrically isolated modulation section can potentially improve the modulation bandwidth of active MMI-LD. Clear and open eye diagram had also been confirmed for 2.5 Gbps, (27-1) pseudo random bit sequence (PRBS) modulation.

UR - http://www.scopus.com/inward/record.url?scp=84904613194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904613194&partnerID=8YFLogxK

U2 - 10.1587/transele.E97.C.781

DO - 10.1587/transele.E97.C.781

M3 - Article

AN - SCOPUS:84904613194

VL - E97-C

SP - 781

EP - 786

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 7

ER -