Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces

Kenjiro Hayashi, Kouhei Morita, Seigi Mizuno, Hiroshi Tochihara, Tanaka Satoru

研究成果: ジャーナルへの寄稿記事

12 引用 (Scopus)

抄録

Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2, ̄) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2, ̄) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.

元の言語英語
ページ(範囲)566-570
ページ数5
ジャーナルSurface Science
603
発行部数3
DOI
出版物ステータス出版済み - 2 1 2009

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flat surfaces
Low energy electron diffraction
oxynitrides
bunching
Scanning tunneling microscopy
Silicon
scanning tunneling microscopy
electron diffraction
silicon
configurations
cells
energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

これを引用

Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces. / Hayashi, Kenjiro; Morita, Kouhei; Mizuno, Seigi; Tochihara, Hiroshi; Satoru, Tanaka.

:: Surface Science, 巻 603, 番号 3, 01.02.2009, p. 566-570.

研究成果: ジャーナルへの寄稿記事

Hayashi, Kenjiro ; Morita, Kouhei ; Mizuno, Seigi ; Tochihara, Hiroshi ; Satoru, Tanaka. / Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces. :: Surface Science. 2009 ; 巻 603, 番号 3. pp. 566-570.
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