Status of surface electron/hole layer on oxide ferroelectrics

Yukio Watanabe, Yosuke Urakami, Sigeru Kaku, Daisuke Matsumoto

研究成果: Contribution to journalConference article査読

12 被引用数 (Scopus)

抄録

Backgrounds of studies of ferroelectric surface carrier layer are discussed in view of domain engineering, memory applications and size effects. Experimental evidence that supports the intrinsic surface carrier layer is presented and is discussed. Especially, we show the surface conduction of BaTiO3 single crystals in ultra high vacuum. To our knowledge, we report the first demonstration of the electrically controlled formation of both electron and hole surface conduction layer that are nonvolatile.

本文言語英語
ページ(範囲)13-18
ページ数6
ジャーナルFerroelectrics
355
1 PART 1
DOI
出版ステータス出版済み - 2007
イベント5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, 日本
継続期間: 9 3 20069 7 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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