TY - JOUR
T1 - Step-by-step growth of an epitaxial Si4O5N3 single layer on SiC(0001) in ultrahigh vacuum
AU - Mizuno, Seigi
AU - Matsuo, Tomomi
AU - Nakagawa, Takeshi
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/7/1
Y1 - 2017/7/1
N2 - An epitaxial single Si4O5N3 layer was formed on a SiC(0001) surface using a step-by-step growth method in an ultrahigh vacuum condition. First, a silicon adsorbed SiC(0001) surface was prepared. The surface was then exposed to NO gas at 950 °C in order to form a Si2ON3 layer. Silicon was deposited on this surface and annealed to adjust the amount of adsorbed Si atoms. Finally, the surface was oxidized at 800 °C. The formation of a Si4O5N3 layer was confirmed by low-energy electron diffraction analysis, Auger electron spectroscopy, and scanning tunneling microscopy. Using this procedure, we were able to suppress the growth of graphite-like clusters on the surface, although silicate-like clusters still remained.
AB - An epitaxial single Si4O5N3 layer was formed on a SiC(0001) surface using a step-by-step growth method in an ultrahigh vacuum condition. First, a silicon adsorbed SiC(0001) surface was prepared. The surface was then exposed to NO gas at 950 °C in order to form a Si2ON3 layer. Silicon was deposited on this surface and annealed to adjust the amount of adsorbed Si atoms. Finally, the surface was oxidized at 800 °C. The formation of a Si4O5N3 layer was confirmed by low-energy electron diffraction analysis, Auger electron spectroscopy, and scanning tunneling microscopy. Using this procedure, we were able to suppress the growth of graphite-like clusters on the surface, although silicate-like clusters still remained.
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U2 - 10.1016/j.susc.2017.03.004
DO - 10.1016/j.susc.2017.03.004
M3 - Article
AN - SCOPUS:85014795255
VL - 661
SP - 22
EP - 27
JO - Surface Science
JF - Surface Science
SN - 0039-6028
ER -