STM visualization of carbon impurities in sandwich structures consisting of hexagonal boron nitride and graphene

Taishi Haga, Yoshitaka Fujimoto, Susumu Saito

研究成果: ジャーナルへの寄稿学術誌査読

3 被引用数 (Scopus)

抄録

We study the electronic structures and scanning tunneling microscopy (STM) images of heterostructures consisting of pristine h-BN, graphene, and C-doped h-BN layers using first-principles total-energy calculations within the framework of the density functional theory. We find that substitutional doping of a C atom at B and N sites in the h-BN layer induces the different charge carrier types and asymmetric carrier densities on the graphene layer. We also find that C-atom impurity state can be clearly observed in the STM image when a C atom is doped at the N site in the h-BN layer. We discuss the relationship between the STM images and the spatial distribution of the C-induced impurity state.

本文言語英語
論文番号SIIB03
ジャーナルJapanese journal of applied physics
58
SI
DOI
出版ステータス出版済み - 2019
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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