Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous SixNy layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in SixN y-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the SixNy layer beneath the Si layer is replaced by a SiO2 buried oxide layer.

元の言語英語
ページ(範囲)6787-6791
ページ数5
ジャーナルThin Solid Films
518
発行部数23
DOI
出版物ステータス出版済み - 9 30 2010

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strain distribution
membranes
Transmission electron microscopy
Membranes
transmission electron microscopy
Electron diffraction
Oxides
electron diffraction
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy. / Gao, Hongye; Ikeda, Ken Ichi; Hata, Satoshi; Nakashima, Hideharu; Wang, Dong; Nakashima, Hiroshi.

:: Thin Solid Films, 巻 518, 番号 23, 30.09.2010, p. 6787-6791.

研究成果: ジャーナルへの寄稿記事

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abstract = "Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous SixNy layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in SixN y-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the SixNy layer beneath the Si layer is replaced by a SiO2 buried oxide layer.",
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AU - Gao, Hongye

AU - Ikeda, Ken Ichi

AU - Hata, Satoshi

AU - Nakashima, Hideharu

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2010/9/30

Y1 - 2010/9/30

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AB - Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous SixNy layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in SixN y-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the SixNy layer beneath the Si layer is replaced by a SiO2 buried oxide layer.

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