Strain engineering the properties of graphene and other two-dimensional crystals

Mark A. Bissett, Masaharu Tsuji, Hiroki Ago

    研究成果: Contribution to journalReview article査読

    158 被引用数 (Scopus)

    抄録

    Graphene has been widely studied for its many extraordinary properties, and other two-dimensional layered materials are now gaining increased interest. These excellent properties make thin layer materials very attractive for integration into a wide variety of technologies, particularly in flexible optoelectronic devices. Therefore, gaining control over these properties will allow for a more focused design and optimisation of these possible technologies. Through the application of mechanical strain it is possible to alter the electronic structures of two-dimensional crystals, such as graphene and transition metal dichalcogenides (e.g. MoS2), and these changes in electronic structure can alter their behaviour. In this perspective we discuss recent advances in the strain engineering of thin layer materials, with a focus on using Raman spectroscopy and electrical transport to investigate the effect of strain as well as the effect of strain on the chemical functionalisation of graphene.

    本文言語英語
    ページ(範囲)11124-11138
    ページ数15
    ジャーナルPhysical Chemistry Chemical Physics
    16
    23
    DOI
    出版ステータス出版済み - 6 21 2014

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(全般)
    • 物理化学および理論化学

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