TY - JOUR
T1 - Strain modulation of β-FeSi2(Ge) formed by SPC of [a-Si/a-FeSiGe]n stacked-structure
AU - Murakami, Yuji
AU - Owatari, Masakazu
AU - Yoshitake, Tsuyoshi
AU - Itakura, Masaru
AU - Sadoh, Taizoh
PY - 2003/9/1
Y1 - 2003/9/1
N2 - Solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n stacked-structures has been investigated. [a-Si/a-Fe0.4Si0.5Ge0.1]n/c-Si (n=1, 2, 4) samples were annealed at 700-900°C for 30 min in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi2(Ge) strained by 0.4-0.5% was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi2 and c-Si0.7Ge0.3 nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.
AB - Solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n stacked-structures has been investigated. [a-Si/a-Fe0.4Si0.5Ge0.1]n/c-Si (n=1, 2, 4) samples were annealed at 700-900°C for 30 min in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi2(Ge) strained by 0.4-0.5% was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi2 and c-Si0.7Ge0.3 nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.
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M3 - Article
AN - SCOPUS:0346394785
SN - 1342-3819
VL - 8
SP - 189
EP - 191
JO - Research Reports on Information Science and Electrical Engineering of Kyushu University
JF - Research Reports on Information Science and Electrical Engineering of Kyushu University
IS - 2
ER -