The fabrication of uniform 150 and 200mm strained-Si/SiGe-on-insulator wafers using Ge-condensation process was discussed. The epitaxial growth of both SiGe and Si films were carried out at 600°C in 1 Pa by a mixture of SiH 4, GeH 4 and H 2. The wafer-in-plane uniformity of stress and thickness was within 3% in relative standard deviation. The integration issues associated with crystalline defects like the threading and misfit dislocations in the SOI and SSOI wafers were also elaborated.
|ジャーナル||Proceedings - IEEE International SOI Conference|
|出版ステータス||出版済み - 2004|
|イベント||2004 IEEE International SOI Conference, Proceedings - Charleston, SC, 米国|
継続期間: 10月 4 2004 → 10月 7 2004
!!!All Science Journal Classification (ASJC) codes