Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Shin Ichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

7 被引用数 (Scopus)

抄録

In order to grow a high quality SiC bulk single crystal, it is important to moderate the residual stress in the grown crystal. The residual stress is affected by not only the temperature distribution, but also by the boundary conditions. In this study, firstly, the effect of the polycrystal and of the crucible walls on the stress distribution was numerically analyzed. The effect of the grown crystal shape on the residual stress was also analyzed and compared to the growth experiment. It is pointed out that in order to moderate the residual stress, it is necessary to take care not only of the temperature distribution but also of the boundary conditions.

本文言語英語
ホスト出版物のタイトルMaterials Science Forum
編集者Peder Bergman, Erik Janzén
出版社Trans Tech Publications Ltd
ページ13-16
ページ数4
ISBN(印刷版)9780878499205
DOI
出版ステータス出版済み - 1月 1 2003
外部発表はい
イベントProceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, スウェーデン
継続期間: 9月 2 20029月 5 2002

出版物シリーズ

名前Materials Science Forum
433-436
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

その他

その他Proceedings of the 4th European Conference on Silicon Carbide and Related Materials
国/地域スウェーデン
CityLinkoping
Period9/2/029/5/02

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル