Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films

Kazuki Nagashima, Takeshi Yanagida, Hidekazu Tanaka, Tomoji Kawai

研究成果: ジャーナルへの寄稿記事

103 引用 (Scopus)

抄録

A stress relaxation effect on the transport properties of strained vanadium dioxide epitaxial thin films grown on Ti O2 (001) single crystal was investigated. When varying the film thickness ranging from 10 to 30 nm, there were no significant changes on the crystal structures identified by x-ray diffraction, i.e., no observable stress relaxation effects. On the other hand, increasing the film thickness resulted in the drastic changes on the transport properties including emerging the multisteps of the metal-insulator transition and also increasing the resistivity. The discrepancy between the observed crystal structure and the transport properties was related to the presence of the nanoscale line cracks due to thermal stress. Thus controlling thermal stress relaxation rather than the stress due to the lattice mismatch is critical to investigate the intrinsic nature on the transport properties of strained vanadium dioxide epitaxial thin films.

元の言語英語
記事番号172106
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
74
発行部数17
DOI
出版物ステータス出版済み - 11 24 2006
外部発表Yes

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Epitaxial films
stress relaxation
Stress relaxation
dioxides
Vanadium
Transport properties
vanadium
transport properties
Thin films
thin films
thermal stresses
Thermal stress
Film thickness
film thickness
Crystal structure
crystal structure
Lattice mismatch
Metal insulator transition
emerging
x ray diffraction

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

これを引用

Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films. / Nagashima, Kazuki; Yanagida, Takeshi; Tanaka, Hidekazu; Kawai, Tomoji.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 74, 番号 17, 172106, 24.11.2006.

研究成果: ジャーナルへの寄稿記事

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