Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

E. F. Bezerra, V. N. Freire, A. G. Souza Filho, J. Mendes Filho, V. Lemos, Yoshifumi Ikoma, F. Watanabe, T. Motooka

研究成果: ジャーナルへの寄稿記事

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Raman spectra of (3C-SiC)8-δ/(3C-SiC0.5Si0.5) δ/(Si)8-δ/(3C-SiC0.5Si 0.5)δ superlattices with interfacial transition regions of thickness S varying from one to three monolayers are calculated. It is shown that severe frequency shifts (up to -86cm-1) and the flattening of the folded optical phonons dispersion curves are due to the interfacial regions, strongly affecting the Raman spectrum in consequence. With increasing interface thickness, the Raman peaks are enhanced in the middle frequency range. These effects are mainly attributed to localization of atomic displacements at the Si/3C-SiC or the 3C-SiC/Si interfacial transition regions.

元の言語英語
ページ(範囲)4316-4318
ページ数3
ジャーナルApplied Physics Letters
77
発行部数26
DOI
出版物ステータス出版済み - 12 25 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Bezerra, E. F., Freire, V. N., Souza Filho, A. G., Mendes Filho, J., Lemos, V., Ikoma, Y., Watanabe, F., & Motooka, T. (2000). Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices. Applied Physics Letters, 77(26), 4316-4318. https://doi.org/10.1063/1.1328763