Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

Kenji Yoshino; Aya Kinoshita; Yasuhiro Shirahata; Minoru Oshima; Keita Nomoto; Tsuyoshi Yoshitake; Shunji Ozaki; Tetsuo Ikari

doi:10.1088/1742-6596/100/4/042042

Structural and electrical characterization of AgInSe₂ crystals grown by hot-press method

Kenji Yoshino, Aya Kinoshita, Yasuhiro Shirahata, Minoru Oshima, Keita Nomoto, Tsuyoshi Yoshitake, Shunji Ozaki, Tetsuo Ikari

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

21 被引用数 (Scopus)

抄録

Undoped polycrystalline AgInSe₂ crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 10¹⁶ cm ³ and a mobility of 70 cm²V^-1s^-1 obtained by Hall measurement at RT.

本文言語	英語
論文番号	042042
ジャーナル	Journal of Physics: Conference Series
巻	100
号	PART 4
DOI	https://doi.org/10.1088/1742-6596/100/4/042042
出版ステータス	出版済み - 3月 1 2008

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（全般）

文献へのアクセス

10.1088/1742-6596/100/4/042042

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引用スタイル

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title = "Structural and electrical characterization of AgInSe2 crystals grown by hot-press method",

abstract = "Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.",

author = "Kenji Yoshino and Aya Kinoshita and Yasuhiro Shirahata and Minoru Oshima and Keita Nomoto and Tsuyoshi Yoshitake and Shunji Ozaki and Tetsuo Ikari",

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T1 - Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

AU - Yoshino, Kenji

AU - Kinoshita, Aya

AU - Shirahata, Yasuhiro

AU - Oshima, Minoru

AU - Nomoto, Keita

AU - Yoshitake, Tsuyoshi

AU - Ozaki, Shunji

AU - Ikari, Tetsuo

N1 - Funding Information: This work was partly supported by The Iwatani Naoji Foundation’s Research Grant.

PY - 2008/3/1

Y1 - 2008/3/1

N2 - Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

AB - Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

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