Bi4-xNdxTi3O12 (BNT, x = 0.25, 0.5, 0.75) thin films with in-plane c-axis orientations were grown on IrO 2/Si from solution route and their electrical properties were studied. The remanent polarization exhibited a broad peak against x with the maximum value of 2Pr = 47 μC/cm2 at x = 0.5. The orthorhombic lattice parameters and Curie temperature TC were measured for BNT powders prepared from the same coating solutions. Both orthorhombic anisotropy a/b and TC monotonically decreased with increasing x. Irrespective of x, leakage current density J < 1.5 × 10-7 A/cm2 under 100 kV/cm was observed by optimizing film growth temperature TG = 700°C, even though the Bi 2O2: blocking layers aligned perpendicular to the film.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||出版済み - 6 13 2005|
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