Structural and optical properties of AlN grown by solid source solution growth method

Yoshihiro Kangawa, Hiroshige Suetsugu, Michael Knetzger, Elke Meissner, Kouji Hazu, Shigefusa F. Chichibu, Takashi Kajiwara, Tanaka Satoru, Yosuke Iwasaki, Koichi Kakimoto

研究成果: ジャーナルへの寄稿記事

抄録

Structural and optical properties of AlN grown on AlN(0001) by the solid source solution growth (3SG) method were investigated. Transmission electron microscopy (TEM) analysis revealed that the geometrical relationship between the growth directions and slip planes influenced the dislocation propagation behaviors and annihilation mechanisms. Panchromatic and monochromatic images in the cathodoluminescence (CL) spectrum further revealed that C impurities were segregated near the surface, while Al vacancies were widely distributed in the AlN/AlN(0001) grown using the 3SG method.

元の言語英語
記事番号085501
ジャーナルJapanese Journal of Applied Physics
54
発行部数8
DOI
出版物ステータス出版済み - 1 1 2015

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Structural properties
Optical properties
optical properties
Cathodoluminescence
cathodoluminescence
Vacancies
slip
Impurities
Transmission electron microscopy
impurities
transmission electron microscopy
propagation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Structural and optical properties of AlN grown by solid source solution growth method. / Kangawa, Yoshihiro; Suetsugu, Hiroshige; Knetzger, Michael; Meissner, Elke; Hazu, Kouji; Chichibu, Shigefusa F.; Kajiwara, Takashi; Satoru, Tanaka; Iwasaki, Yosuke; Kakimoto, Koichi.

:: Japanese Journal of Applied Physics, 巻 54, 番号 8, 085501, 01.01.2015.

研究成果: ジャーナルへの寄稿記事

Kangawa, Yoshihiro ; Suetsugu, Hiroshige ; Knetzger, Michael ; Meissner, Elke ; Hazu, Kouji ; Chichibu, Shigefusa F. ; Kajiwara, Takashi ; Satoru, Tanaka ; Iwasaki, Yosuke ; Kakimoto, Koichi. / Structural and optical properties of AlN grown by solid source solution growth method. :: Japanese Journal of Applied Physics. 2015 ; 巻 54, 番号 8.
@article{67f122039c2c4277b65823e11a4bd490,
title = "Structural and optical properties of AlN grown by solid source solution growth method",
abstract = "Structural and optical properties of AlN grown on AlN(0001) by the solid source solution growth (3SG) method were investigated. Transmission electron microscopy (TEM) analysis revealed that the geometrical relationship between the growth directions and slip planes influenced the dislocation propagation behaviors and annihilation mechanisms. Panchromatic and monochromatic images in the cathodoluminescence (CL) spectrum further revealed that C impurities were segregated near the surface, while Al vacancies were widely distributed in the AlN/AlN(0001) grown using the 3SG method.",
author = "Yoshihiro Kangawa and Hiroshige Suetsugu and Michael Knetzger and Elke Meissner and Kouji Hazu and Chichibu, {Shigefusa F.} and Takashi Kajiwara and Tanaka Satoru and Yosuke Iwasaki and Koichi Kakimoto",
year = "2015",
month = "1",
day = "1",
doi = "10.7567/JJAP.54.085501",
language = "English",
volume = "54",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "8",

}

TY - JOUR

T1 - Structural and optical properties of AlN grown by solid source solution growth method

AU - Kangawa, Yoshihiro

AU - Suetsugu, Hiroshige

AU - Knetzger, Michael

AU - Meissner, Elke

AU - Hazu, Kouji

AU - Chichibu, Shigefusa F.

AU - Kajiwara, Takashi

AU - Satoru, Tanaka

AU - Iwasaki, Yosuke

AU - Kakimoto, Koichi

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Structural and optical properties of AlN grown on AlN(0001) by the solid source solution growth (3SG) method were investigated. Transmission electron microscopy (TEM) analysis revealed that the geometrical relationship between the growth directions and slip planes influenced the dislocation propagation behaviors and annihilation mechanisms. Panchromatic and monochromatic images in the cathodoluminescence (CL) spectrum further revealed that C impurities were segregated near the surface, while Al vacancies were widely distributed in the AlN/AlN(0001) grown using the 3SG method.

AB - Structural and optical properties of AlN grown on AlN(0001) by the solid source solution growth (3SG) method were investigated. Transmission electron microscopy (TEM) analysis revealed that the geometrical relationship between the growth directions and slip planes influenced the dislocation propagation behaviors and annihilation mechanisms. Panchromatic and monochromatic images in the cathodoluminescence (CL) spectrum further revealed that C impurities were segregated near the surface, while Al vacancies were widely distributed in the AlN/AlN(0001) grown using the 3SG method.

UR - http://www.scopus.com/inward/record.url?scp=84938324141&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938324141&partnerID=8YFLogxK

U2 - 10.7567/JJAP.54.085501

DO - 10.7567/JJAP.54.085501

M3 - Article

VL - 54

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8

M1 - 085501

ER -