Two indium-induced Si(111) reconstructed surfaces, the (Formula presented) and the (4×1) structures, were examined by dynamical low-energy electron diffraction I − V analysis. As suggested in former studies, the T4 model of the (Formula presented) structure showed the best agreement with the experiments. For the (4×1) structure, we examined 45 models and selected the model proposed by a surface x-ray diffraction study as the most appropriate structure. The low-temperature phase, whose diffraction pattern is (8 × 1) − p1g1 with half-order streaks, has I − V curves almost identical to those of the (4×1) phase. Therefore, the structural changes accompanying a phase transition between the (4×1) and (8 × 1) − p1g1 structures should be very small.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版物ステータス||出版済み - 5 20 2003|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics