Structural improvement of nickel metal-induced-lateral-crystallized silicon films using excimer laser annealing

M. Miyasaka, K. Makihira, T. Asano, J. Stoemenos

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

Crystalline properties of nickel metalinduced- lateral-crystallized (Ni-MILC) silicon films are examined in detail. Laterally grown crystalline grains can be as large as 19 μm, though the grains consist of small misorientated sub-grains. The excimer laser annealing (ELA) method definitely improves Ni-MILC film quality. As a result, fairly good polysilicon thin film transistors are easily fabricated through a low-temperature process. It is, however, difficult to completely eliminate the subgrains by simply applying the ELA method to Ni-MILC silicon films.

本文言語英語
ホスト出版物のタイトルEuropean Solid-State Device Research Conference
編集者Heiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
出版社IEEE Computer Society
ページ123-126
ページ数4
ISBN(電子版)2914601018
DOI
出版ステータス出版済み - 1 1 2001
外部発表はい
イベント31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, ドイツ
継続期間: 9 11 20019 13 2001

出版物シリーズ

名前European Solid-State Device Research Conference
ISSN(印刷版)1930-8876

その他

その他31st European Solid-State Device Research Conference, ESSDERC 2001
Countryドイツ
CityNuremberg
Period9/11/019/13/01

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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