Structural optimization of pinning sites for high density integration of the domain wall based devices

Teppei Takashima, Terumitsu Tanaka, Kimihide Matsuyama

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

The geometrical structure of the T-shaped pinning site has been numerically optimized for high density integration of the domain wall based devices. Micromagnetic simulation demonstrates the bit by bit propagation between the pinning sites with 120 nm period, arraigned along a ferromagnetic nanowire with 40 nm-width and 10 nm-thickness. The practical amplitude margin for pulsed fields for bit propagation (60% of the mid value) and the sufficient potential energy well, an order of larger than the ambient thermal energy, are confirmed in the optimized structure.

本文言語英語
論文番号6332613
ページ(範囲)3227-3229
ページ数3
ジャーナルIEEE Transactions on Magnetics
48
11
DOI
出版ステータス出版済み - 2012

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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