Structural properties of nickel metal-induced laterally crystallized silicon films and their improvement using excimer laser annealing

Mitsutoshi Miyasaka, Tatsuya Shimoda, Kenji Makihira, Tanemasa Asano, Béla Pecz, John Stoemenos

研究成果: Contribution to journalArticle査読

16 被引用数 (Scopus)

抄録

Structural properties of nickel metal-induced laterally crystallized (Ni-MILC) silicon films are studied in detail mainly using transmission electron microscopy (TEM). Laterally grown crystalline grains can be as large as 17 μm, though the grains consist of small misorientated subgrains and, in addition, some subgrains are divided further into overlapping upper and lower subgrains. The excimer laser annealing (ELA) method definitely improves the Ni-MILC silicon film quality, enlarges the subgrains and removes the overlapping structure. As a result, fairly good polycrystalline silicon (polysilicon) thin film transistors (TFTs) are easily fabricated through a low-temperature process. It is difficult, however, to completely eliminate the subgrains by simply applying the ELA method to Ni-MILC silicon films.

本文言語英語
ページ(範囲)2592-2599
ページ数8
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
5 A
DOI
出版ステータス出版済み - 5 2003
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Structural properties of nickel metal-induced laterally crystallized silicon films and their improvement using excimer laser annealing」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル