Structural study of small angle grain boundaries in multicrystalline Si

Yoshiji Miyamura, Hirofumi Harada, Shun Ito, Jun Chen, Takashi Sekiguchi

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

6 被引用数 (Scopus)

抄録

Small angle grain boundaries (SA-GBs) are known as the most electrically active defects in multicrystalline silicon. These SA-GBs are classified as "general" and "special" by the normal and strong electrical activity at 300K, respectively. In this study, the origins of these electrical activities of SA-GBs were elucidated by using the electron-beam-induced current (EBIC) technique and transmission electron microscopy (TEM). It was found that both general and special SA-GBs were composed of edge-type dislocations and 60 degree dislocations. The fraction of edge dislocation in special SA-GB was higher than that in general one, which suggests that the strong electrical activity mainly originates in edge dislocations.

本文言語英語
ホスト出版物のタイトルDefects-Recognition, Imaging and Physics in Semiconductors XIV
出版社Trans Tech Publications Ltd
ページ157-160
ページ数4
ISBN(印刷版)9783037854426
DOI
出版ステータス出版済み - 2012
外部発表はい
イベント14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, 日本
継続期間: 9月 25 20119月 29 2011

出版物シリーズ

名前Materials Science Forum
725
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

その他

その他14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
国/地域日本
CityMiyazaki
Period9/25/119/29/11

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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