TY - GEN
T1 - Structural study of small angle grain boundaries in multicrystalline Si
AU - Miyamura, Yoshiji
AU - Harada, Hirofumi
AU - Ito, Shun
AU - Chen, Jun
AU - Sekiguchi, Takashi
PY - 2012
Y1 - 2012
N2 - Small angle grain boundaries (SA-GBs) are known as the most electrically active defects in multicrystalline silicon. These SA-GBs are classified as "general" and "special" by the normal and strong electrical activity at 300K, respectively. In this study, the origins of these electrical activities of SA-GBs were elucidated by using the electron-beam-induced current (EBIC) technique and transmission electron microscopy (TEM). It was found that both general and special SA-GBs were composed of edge-type dislocations and 60 degree dislocations. The fraction of edge dislocation in special SA-GB was higher than that in general one, which suggests that the strong electrical activity mainly originates in edge dislocations.
AB - Small angle grain boundaries (SA-GBs) are known as the most electrically active defects in multicrystalline silicon. These SA-GBs are classified as "general" and "special" by the normal and strong electrical activity at 300K, respectively. In this study, the origins of these electrical activities of SA-GBs were elucidated by using the electron-beam-induced current (EBIC) technique and transmission electron microscopy (TEM). It was found that both general and special SA-GBs were composed of edge-type dislocations and 60 degree dislocations. The fraction of edge dislocation in special SA-GB was higher than that in general one, which suggests that the strong electrical activity mainly originates in edge dislocations.
UR - http://www.scopus.com/inward/record.url?scp=84872474993&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84872474993&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.725.157
DO - 10.4028/www.scientific.net/MSF.725.157
M3 - Conference contribution
AN - SCOPUS:84872474993
SN - 9783037854426
T3 - Materials Science Forum
SP - 157
EP - 160
BT - Defects-Recognition, Imaging and Physics in Semiconductors XIV
PB - Trans Tech Publications Ltd
T2 - 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Y2 - 25 September 2011 through 29 September 2011
ER -