抄録
SiC(0001)-(1×1)-H consisting of monohydride is a preferred starting surface structure for synthesis of the two-dimensional materials on SiC(0001). Here we report preparation of the SiC(0001)-(1×1)-H by atomic hydrogen exposure and structure determination of the SiC(0001)-(1×1)-H by a quantitative LEED analysis. Our data show that the SiC(0001)-(1×1)-H is indeed a bulk terminated unreconstructed SiC(0001) surface. The sample morphology was also investigated using AFM. The dominance of one of two possible inequivalent surface terminations of 4H polytype of SiC crystal was confirmed.
本文言語 | 英語 |
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論文番号 | 235434 |
ジャーナル | Physical Review B |
巻 | 99 |
号 | 23 |
DOI | |
出版ステータス | 出版済み - 6月 28 2019 |
All Science Journal Classification (ASJC) codes
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学