At the initial part of the transient reflecting grating signal of silicon, a signal attributed to photoexcited carrier was observed apart from thermal and acoustic effects. From theoretical approach, we found that the intensity of the carrier signal was related to the Auger recombination rate. With this signal, we obtained both images representing picosecond-photoexcited carrier concentration and Auger recombination rate of a helium-implanted crystalline silicon (dose, 1015 atoms/cm2).
|ジャーナル||Journal De Physique|
|出版ステータス||出版済み - 7 1994|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)