Study of a new system for measuring semiconductor using laser stimulated scattering microscope

T. Tanaka, A. Harata, T. Sawada

研究成果: Contribution to journalConference article査読

2 被引用数 (Scopus)

抄録

At the initial part of the transient reflecting grating signal of silicon, a signal attributed to photoexcited carrier was observed apart from thermal and acoustic effects. From theoretical approach, we found that the intensity of the carrier signal was related to the Auger recombination rate. With this signal, we obtained both images representing picosecond-photoexcited carrier concentration and Auger recombination rate of a helium-implanted crystalline silicon (dose, 1015 atoms/cm2).

本文言語英語
ページ(範囲)C7-171-174
ジャーナルJournal De Physique
4
7
出版ステータス出版済み - 7 1994
外部発表はい
イベントProceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena - Guadeloupe, Fr
継続期間: 1 22 19941 25 1994

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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