Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction

Yoshihiro Kangawa, Norihito Kawaguchi, Ken Nosuke Hida, Yoshinao Kumagai, Akinori Koukitu

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

The indium composition of the InGaN film increases with decreasing growth temperature; however, the crystalline quality of the film is poor when it is grown at low temperatures. To form a high-quality InGaN film with a large indium mole fraction, Nd: YAG pulse laser assisted metalorganic vapor phase epitaxy (MOVPE) was carried out at low temperatures. The results suggest that film quality can be improved by pulse laser irradiation on the surface of the film.

本文言語英語
ページ(範囲)L1026-L1028
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
8 A
DOI
出版ステータス出版済み - 8 1 2004
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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