Study of SiO 2 thickness effect on insertion loss of CMOS 60 GHz band pass filter

Nessim Mahmoud, Adel Barakat, Anwer S.Abd El-Hameed, Adel B. Abdel-Rahman, Ahmed Allam, Ramesh Pokharel

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

This paper presents a study of the effect of the SiO 2 substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO 2 . An insertion loss of -1.49dB is achieved with a SiO 2 thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.

本文言語英語
ホスト出版物のタイトル2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ページ237-239
ページ数3
ISBN(電子版)9781509002467
DOI
出版ステータス出版済み - 3 23 2016
イベントIEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 - Cairo, エジプト
継続期間: 12 6 201512 9 2015

出版物シリーズ

名前Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
2016-March

その他

その他IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
Countryエジプト
CityCairo
Period12/6/1512/9/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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