Study of SiO2 thickness effect on insertion loss of CMOS 60 GHz band pass filter

Nessim Mahmoud; Adel Barakat; Anwer S.Abd El-Hameed; Adel B. Abdel-Rahman; Ahmed Allam; Ramesh K. Pokharel

doi:10.1109/ICECS.2015.7440292

Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter

Nessim Mahmoud, Adel Barakat, Anwer S.Abd El-Hameed, Adel B. Abdel-Rahman, Ahmed Allam, Ramesh K. Pokharel

I&Eビジョナリー特別部門

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

1 被引用数 (Scopus)

抄録

This paper presents a study of the effect of the SiO₂ substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO₂. An insertion loss of -1.49dB is achieved with a SiO₂ thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.

本文言語	英語
ホスト出版物のタイトル	2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	237-239
ページ数	3
ISBN（電子版）	9781509002467
DOI	https://doi.org/10.1109/ICECS.2015.7440292
出版ステータス	出版済み - 3月 23 2016
イベント	IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 - Cairo, エジプト継続期間: 12月 6 2015 → 12月 9 2015

出版物シリーズ

名前	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
巻	2016-March

その他

その他	IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
国/地域	エジプト
City	Cairo
Period	12/6/15 → 12/9/15

!!!All Science Journal Classification (ASJC) codes

電子工学および電気工学

文献へのアクセス

10.1109/ICECS.2015.7440292

他のファイルとリンク

引用スタイル

Mahmoud, N., Barakat, A., El-Hameed, A. S. A., Abdel-Rahman, A. B., Allam, A., & Pokharel, R. K. (2016). Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. In 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 (pp. 237-239). [7440292] (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 2016-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.2015.7440292

Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. / Mahmoud, Nessim; Barakat, Adel; El-Hameed, Anwer S.Abd その他.
2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 237-239 7440292 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 2016-March).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Mahmoud, N, Barakat, A, El-Hameed, ASA, Abdel-Rahman, AB, Allam, A & Pokharel, RK 2016, Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. in 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015., 7440292, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, vol. 2016-March, Institute of Electrical and Electronics Engineers Inc., pp. 237-239, IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015, Cairo, エジプト, 12/6/15. https://doi.org/10.1109/ICECS.2015.7440292

Mahmoud N, Barakat A, El-Hameed ASA, Abdel-Rahman AB, Allam A, Pokharel RK. Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. In 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 237-239. 7440292. (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems). doi: 10.1109/ICECS.2015.7440292

Mahmoud, Nessim ; Barakat, Adel ; El-Hameed, Anwer S.Abd その他. / Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 237-239 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems).

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title = "Study of SiO2 thickness effect on insertion loss of CMOS 60 GHz band pass filter",

abstract = "This paper presents a study of the effect of the SiO2 substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO2. An insertion loss of -1.49dB is achieved with a SiO2 thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.",

author = "Nessim Mahmoud and Adel Barakat and El-Hameed, {Anwer S.Abd} and Abdel-Rahman, {Adel B.} and Ahmed Allam and Pokharel, {Ramesh K.}",

note = "Funding Information: The authors would like to thank the ministry of higher Education (MoHE)-mission department, and Egypt-Japan University of Science and Technology (E-JUST) for funding our work, in addition, this work was partly supported by a Grant-in-Aid for Scientific Research(B) from JSPS.KAKENHI (Grant no. 23360159).; IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 ; Conference date: 06-12-2015 Through 09-12-2015",

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AU - Abdel-Rahman, Adel B.

AU - Allam, Ahmed

AU - Pokharel, Ramesh K.

N1 - Funding Information: The authors would like to thank the ministry of higher Education (MoHE)-mission department, and Egypt-Japan University of Science and Technology (E-JUST) for funding our work, in addition, this work was partly supported by a Grant-in-Aid for Scientific Research(B) from JSPS.KAKENHI (Grant no. 23360159).

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N2 - This paper presents a study of the effect of the SiO2 substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO2. An insertion loss of -1.49dB is achieved with a SiO2 thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.

AB - This paper presents a study of the effect of the SiO2 substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO2. An insertion loss of -1.49dB is achieved with a SiO2 thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.

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